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| Advance Product Information September 26, 2005 High Power Ka-Band Absorptive SPDT Switch * * * * * * * * TGS4304 Key Features and Performance 32 - 40 GHz Frequency Range > 33 dBm Input P1dB @ VC = +10V On Chip Biasing Resistors On Chip DC Blocks < 1.0 dB Midband Insertion Loss < 4ns Switching Speed VPIN Technology Chip Dimensions: 1.58 x 1.10 x 0.10 mm (0.043 x 0.062 x 0.004 inches) Description The TriQuint TGS4304 is a GaAs absorptive single-pole, double-throw (SPDT) PIN monolithic switch designed to operate over the Ka-Band frequency range. This switch maintains a low insertion loss with high power handling of 33dBm or greater input P1dB at VC = +10V. These advantages, along with the small size of the chip, make the TGS4304 ideal for use in communication and transmit/receive applications. S21 (dB) Primary Applications * * * Ka-Band Transmit / Receive Point-to-Point Radio Point-to-Multipoint Radio Measured Data VA = +5V, IA 0mA, VB = -4V, IB = 30mA 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 -4.5 -5.0 32 33 34 35 36 37 Frequency (GHz) 38 39 40 S21 S11 S22 20 15 10 0 -5 -10 -15 -20 -25 -30 S11,S22 (dB) 5 The TGS4304 is 100% DC & RF tested on-wafer to ensure performance compliance. Lead free and RoHS compliant. Note: This device is early in the characterization process prior to finalizing all electrical test specifications. Specifications are subject to change without notice. 1 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 TGS4304 TABLE I MAXIMUM RATINGS Symbol VC IC PIN TM TSTG 1/ 2/ 3/ Parameter 1/ Control Voltage Control Current Input Continuous Wave Power Mounting Temperature (30 Seconds) Storage Temperature Value -5V to +25V 34 mA 38 dBm 320 C -65 to 150 C 0 0 Notes 2/ 2/ These ratings represent the maximum operable values for this device. VC and IC are per bias pad. Operation above 30dBm requires control voltages above +7.5V. TABLE II RF CHARACTERIZATION TABLE (TA = 25C, Nominal) (VA = +5V, IA = 0mA, VB = -4V, IB = 30mA) Symbol Parameter Test Conditions F = 32 - 34 GHz F = 34 - 37 GHz F = 37 - 40 GHz F = 32 - 40 GHz VC = +5V VC = +7.5V VC = +10V Typ 1.3 0.9 1.3 10 30.5 32 33 Units Notes IL Insertion Loss dB RL Return Loss Output Power @ 1dB Gain Compression dB P1dB dBm 1/ 2/ Note: Table II Lists the RF Characteristics of typical devices as determined by fixtured measurements. 1/ 2/ Frequency = 35GHz Extrapolated from the data 2 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 TGS4304 TABLE III TRUTH TABLE Selected RF Output RF Out A RF Out B VA +5V @ ~0mA -4V @ 30mA VB -4V @ 30mA +5V @ ~0mA Selected RF Output RF Out A RF Out B IA +5V @ ~0mA 30mA IB 30mA +5V @ ~0mA Operation at RF power levels >30 dBm requires increasing the positive voltage level to put a larger reverse bias on the diodes while the negative voltage level remains at -4V with a current of approximately 30mA. If you are using -5V, use alternate assembly with off chip resistors. Bond pads IA and IB bypass the on-chip series resistors to allow adjustment of the current to the diodes in their forward biased state. 3 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 Measured Performance On State 0 -1 -2 -3 S21 S11 S22 TGS4304 20 15 10 5 0 -5 -10 -15 -20 -25 -30 S21 (dB) -4 -5 -6 -7 -8 -9 -10 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Frequency (GHz) Off State -20 -30 -40 S31 S11 S33 30 20 10 0 -10 -20 -30 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 -50 -60 -70 -80 Frequency (GHz) 4 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com S11,S33 (dB) S31 (dB) S11,S22 (dB) Advance Product Information September 26, 2005 Measured Performance 35 GHz 0 -0.2 -0.4 TGS4304 Insertion Loss (dB) Vc=5V Vc=7.5V Vc=10V Vc=15V -0.6 -0.8 -1 -1.2 -1.4 -1.6 -1.8 -2 16 18 20 22 24 26 28 30 32 Input Power (dBm) 5 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 Measured Performance On State 0 -1 -2 -3 TGS4304 S21 (dB) -4 -5 -6 -7 -8 -9 -40C +24C +85C -10 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Frequency (GHz) Off State 0 -5 -10 -15 -40C +24C +85C S31 (dB) -20 -25 -30 -35 -40 -45 -50 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 Frequency (GHz) 6 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 Mechanical Drawing 1.10 [0.043] 1.00 [0.039] 3 4 5 6 TGS4304 0.45 [0.018] 2 7 0.10 [0.004] 0.00 [0.000] 0.00 [0.000] 0.10 [0.004] 0.34 [0.013] 0.49 [0.019] 1 0.79 [0.031] 1.09 [0.043] 1.24 [0.049] 1.48 [0.058] Units: millimeters (inches) Thickness: 0.100 (0.004) Chip edge to bond pad dimensions are shown to center of bond pad Chip size tolerance: +/- 0.051 (0.002) GND IS BACKSIDE OF MMIC Bond Bond Bond Bond Bond Bond Bond Pad Pad Pad Pad Pad Pad Pad #1 #2 #3 #4 #5 #6 #7 (RF In) (RF Out A) (VA) (IA) (IB) (VB) (RF Out B) 0.15 x 0.10 (0.006 x 0.004) 0.10 x 0.15 (0.004 x 0.006) 0.10 x 0.10 (0.004 x 0.004) 0.15 x 0.10 (0.006 x 0.004) 0.15 x 0.10 (0.006 x 0.004) 0.10 x 0.10 (0.004 x 0.004) 0.10 x 0.15 (0.004 x 0.006) 1.58 [0.062] 7 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 Chip Assembly & Bonding Diagram TGS4304 VA VB RF Output A RF Output B RF Input GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 8 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 Alternate Chip Assembly & Bonding Diagram TGS4304 VA VB R R RF Output A RF Output B RF Input TABLE IV BIAS RESISTOR VALUES Maximum Negative Bias Voltage -5V -7.5V -10V -15V -20V R 33 Ohms 117 Ohms 200 Ohms 367 Ohms 533 Ohms 9 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com Advance Product Information September 26, 2005 TGS4304 Assembly Process Notes Reflow process assembly notes: * * * * * Use AuSn (80/20) solder with limited exposure to temperatures at or above 300C. (30 seconds maximum) An alloy station or conveyor furnace with reducing atmosphere should be used. No fluxes should be utilized. Coefficient of thermal expansion matching is critical for long-term reliability. Devices must be stored in a dry nitrogen atmosphere. Component placement and adhesive attachment assembly notes: * * * * * * * Vacuum pencils and/or vacuum collets are the preferred method of pick up. Air bridges must be avoided during placement. The force impact is critical during auto placement. Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. Interconnect process assembly notes: * * * * Thermosonic ball bonding is the preferred interconnect technique. Force, time, and ultrasonics are critical parameters. Aluminum wire should not be used. Maximum stage temperature is 200C. GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should be observed during handling, assembly and test. 10 TriQuint Semiconductor Texas Phone: (972)994-8465 Fax: (972)994 8504 Email: info-mmw@tqs.com Web: www.triquint.com |
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